Burstein-Moss shift of n-doped In0.53Ga0.47As/InP
Identifieur interne : 010071 ( Main/Repository ); précédent : 010070; suivant : 010072Burstein-Moss shift of n-doped In0.53Ga0.47As/InP
Auteurs : RBID : Pascal:01-0239012Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
We have evaluated the Burstein-Moss (BM) shift at 300 K in seven samples of n-In0.53Ga0.47As (1.3×1016≤n≤3.9×1019cm-3) lattice matched to InP using spectral ellipsometry in the range of 0.4-5.1 eV. The data have been fitted over the entire spectral range to a model reported by Holden [in Thermphotovoltaic Generation of Electricity, edited by T. J. Coutts, J. P. Brenner, and C. S. Allman, AIP Conf. Proc. No. 460 (AIP, Woodbury, NY, 1999), p. 39], based on the electronic energy-band structure near critical points plus relevant discrete and continuum excitonic effects. A Fermi-level filling factor in the region of the fundamental gap has been used to account for the BM effect. While our data exhibit nonparabolic effects, with a blueshift of 415 meV for the most highly doped sample, we did not observe the Fermi-level saturation at 130 meV for n≥1019cm-3 reported by Tsukernik [Proceedings of the 24th International Conference on the Physics of Semiconductors, Jerusalem, 1998, edited by D. Gershoni (World Scientific, Singapore, 1999)]. Our BM displacements are in agreement with a modified full-potential linearized augmented-plane-wave calculation [G. W. Charache , J. Appl. Phys. 86, 452 (1999)] plus possible band-gap-reduction effects.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 011189
Links to Exploration step
Pascal:01-0239012Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Burstein-Moss shift of n-doped In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP</title><author><name sortKey="Munoz, Martin" uniqKey="Munoz M">Martin Munoz</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department and New York Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Physics Department and New York Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>IBM Thomas J. Watson Research Center, Route 134, Post Office Box 218, Yorktown Heights, New York 10598</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>IBM Thomas J. Watson Research Center, Route 134, Post Office Box 218, Yorktown Heights</wicri:cityArea></affiliation></author><author><name sortKey="Pollak, Fred H" uniqKey="Pollak F">Fred H. Pollak</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department and New York Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Physics Department and New York Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn</wicri:cityArea></affiliation></author><author><name sortKey="Kahn, Mathias" uniqKey="Kahn M">Mathias Kahn</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Israël</country><wicri:regionArea>Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000</wicri:regionArea><wicri:noRegion>Haifa 32000</wicri:noRegion></affiliation></author><author><name sortKey="Ritter, Dan" uniqKey="Ritter D">Dan Ritter</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Israël</country><wicri:regionArea>Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000</wicri:regionArea><wicri:noRegion>Haifa 32000</wicri:noRegion></affiliation></author><author><name sortKey="Kronik, Leeor" uniqKey="Kronik L">Leeor Kronik</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department and New York Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Physics Department and New York Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn</wicri:cityArea></affiliation></author><author><name sortKey="Cohen, Guy M" uniqKey="Cohen G">Guy M. Cohen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department and New York Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Physics Department and New York Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0239012</idno><date when="2001-06-15">2001-06-15</date><idno type="stanalyst">PASCAL 01-0239012 AIP</idno><idno type="RBID">Pascal:01-0239012</idno><idno type="wicri:Area/Main/Corpus">011189</idno><idno type="wicri:Area/Main/Repository">010071</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Critical points</term><term>Ellipsometry</term><term>Energy gap</term><term>Excitons</term><term>Experimental study</term><term>Fermi level</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Semiconductor superlattices</term><term>Spectral shift</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7321C</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Ellipsométrie</term><term>Déplacement spectral</term><term>Exciton</term><term>Superréseau semiconducteur</term><term>Niveau Fermi</term><term>Etat interface</term><term>Point critique</term><term>Bande interdite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have evaluated the Burstein-Moss (BM) shift at 300 K in seven samples of n-In<sub>0.53</sub>Ga<sub>0.47</sub>As (1.3×10<sup>16</sup>≤n≤3.9×10<sup>19</sup>cm<sup>-3</sup>) lattice matched to InP using spectral ellipsometry in the range of 0.4-5.1 eV. The data have been fitted over the entire spectral range to a model reported by Holden [in Thermphotovoltaic Generation of Electricity, edited by T. J. Coutts, J. P. Brenner, and C. S. Allman, AIP Conf. Proc. No. 460 (AIP, Woodbury, NY, 1999), p. 39], based on the electronic energy-band structure near critical points plus relevant discrete and continuum excitonic effects. A Fermi-level filling factor in the region of the fundamental gap has been used to account for the BM effect. While our data exhibit nonparabolic effects, with a blueshift of 415 meV for the most highly doped sample, we did not observe the Fermi-level saturation at 130 meV for n≥10<sup>19</sup>cm<sup>-3</sup> reported by Tsukernik [Proceedings of the 24th International Conference on the Physics of Semiconductors, Jerusalem, 1998, edited by D. Gershoni (World Scientific, Singapore, 1999)]. Our BM displacements are in agreement with a modified full-potential linearized augmented-plane-wave calculation [G. W. Charache , J. Appl. Phys. 86, 452 (1999)] plus possible band-gap-reduction effects.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>63</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Burstein-Moss shift of n-doped In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP</s1></fA08><fA11 i1="01" i2="1"><s1>MUNOZ (Martin)</s1></fA11><fA11 i1="02" i2="1"><s1>POLLAK (Fred H.)</s1></fA11><fA11 i1="03" i2="1"><s1>KAHN (Mathias)</s1></fA11><fA11 i1="04" i2="1"><s1>RITTER (Dan)</s1></fA11><fA11 i1="05" i2="1"><s1>KRONIK (Leeor)</s1></fA11><fA11 i1="06" i2="1"><s1>COHEN (Guy M.)</s1></fA11><fA14 i1="01"><s1>Physics Department and New York Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455</s1></fA14><fA14 i1="04"><s1>IBM Thomas J. Watson Research Center, Route 134, Post Office Box 218, Yorktown Heights, New York 10598</s1></fA14><fA20><s2>233302-233302-3</s2></fA20><fA21><s1>2001-06-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0239012</s0></fA47><fA60><s1>P</s1><s3>CC</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have evaluated the Burstein-Moss (BM) shift at 300 K in seven samples of n-In<sub>0.53</sub>Ga<sub>0.47</sub>As (1.3×10<sup>16</sup>≤n≤3.9×10<sup>19</sup>cm<sup>-3</sup>) lattice matched to InP using spectral ellipsometry in the range of 0.4-5.1 eV. The data have been fitted over the entire spectral range to a model reported by Holden [in Thermphotovoltaic Generation of Electricity, edited by T. J. Coutts, J. P. Brenner, and C. S. Allman, AIP Conf. Proc. No. 460 (AIP, Woodbury, NY, 1999), p. 39], based on the electronic energy-band structure near critical points plus relevant discrete and continuum excitonic effects. A Fermi-level filling factor in the region of the fundamental gap has been used to account for the BM effect. While our data exhibit nonparabolic effects, with a blueshift of 415 meV for the most highly doped sample, we did not observe the Fermi-level saturation at 130 meV for n≥10<sup>19</sup>cm<sup>-3</sup> reported by Tsukernik [Proceedings of the 24th International Conference on the Physics of Semiconductors, Jerusalem, 1998, edited by D. Gershoni (World Scientific, Singapore, 1999)]. Our BM displacements are in agreement with a modified full-potential linearized augmented-plane-wave calculation [G. W. Charache , J. Appl. Phys. 86, 452 (1999)] plus possible band-gap-reduction effects.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B70C20D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7321C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Ellipsométrie</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Ellipsometry</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Déplacement spectral</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Spectral shift</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Exciton</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Excitons</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Superréseau semiconducteur</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor superlattices</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Niveau Fermi</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Fermi level</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Etat interface</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Interface states</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Point critique</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Critical points</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Bande interdite</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Energy gap</s0></fC03><fN21><s1>162</s1></fN21><fN47 i1="01" i2="1"><s0>0123M000718</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 010071 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 010071 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:01-0239012
|texte= Burstein-Moss shift of n-doped In0.53Ga0.47As/InP
}}
| This area was generated with Dilib version V0.5.77. |  |